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Unified simulation of transport and luminescence inoptoelectronic nanostructures

Steiger, Sebastian ; Veprek, Ratko ; Witzigmann, Bernd

In: Journal of Computational Electronics, 2008, vol. 7, no. 4, p. 509-520

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    Titel
    • Unified simulation of transport and luminescence inoptoelectronic nanostructures
    Autor
    • Steiger, Sebastian. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, 8092, Zurich, Switzerland
    • Veprek, Ratko. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, 8092, Zurich, Switzerland
    • Witzigmann, Bernd. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, 8092, Zurich, Switzerland
    Dokumententyp
    • Postprint
    Sprache
    • Englisch
    Veröffentlicht in
    • Journal of Computational Electronics, 2008, vol. 7, no. 4, p. 509-520. Springer US; http://www.springer-ny.com
    Andere elektronische Ausgabe
    OAI-PMH-ID
    • oai:doc.rero.ch:321345
    Summary
    Computer simulation of microscopic transport and light emission in semiconductor nanostructures is often restricted to an isolated system of a single quantum well, wire or dot. In this work we report on the development of a simulator for devices with various kinds of nanostructures which exhibit quantization in different dimensionalities. Our approach is based upon the partition of the carrier densities within each quantization region into bound and unbound populations. A bound carrier is treated fully coherent in the directions of confinement, whereas it is assumed to be totally incoherent with a motion driven by classical drift and diffusion in the remaining directions. Coupling of the populations takes place through electrostatics and carrier capture. We illustrate the applicability of our approach with a well-wire structure