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Laser ablation inductively coupled plasma mass spectrometry for direct analysis of the spatial distribution of trace elements in metallurgical-grade silicon

Pisonero, Jorge ; Kroslakova, Ivana ; Günther, Detlef ; Latkoczy, Christopher

In: Analytical and Bioanalytical Chemistry, 2006, vol. 386, no. 1, p. 12-20

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    Titre
    • Laser ablation inductively coupled plasma mass spectrometry for direct analysis of the spatial distribution of trace elements in metallurgical-grade silicon
    Auteur
    • Pisonero, Jorge. Laboratory of Inorganic Chemistry, ETH Zurich, 8093, Zurich, Switzerland
    • Kroslakova, Ivana. Laboratory of Inorganic Chemistry, ETH Zurich, 8093, Zurich, Switzerland
    • Günther, Detlef. Laboratory of Inorganic Chemistry, ETH Zurich, 8093, Zurich, Switzerland
    • Latkoczy, Christopher. Laboratory of Inorganic Chemistry, ETH Zurich, 8093, Zurich, Switzerland
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Analytical and Bioanalytical Chemistry, 2006, vol. 386, no. 1, p. 12-20. Springer-Verlag
    Autre version électronique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:315675
    Summary
    The spatial distribution and concentration of impurities in metallurgical-grade silicon (MG-Si) samples (97-99% w/w Si) were investigated by use of laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). The spatial resolution (120μm) and low limits of detection (mg kg−1) for quality assurance of such materials were studied in detail. The volume-dependent precision and accuracy of non-matrix-matched calibration for quantification of minor elements, using NIST SRM 610 (silicate standard), indicates that LA-ICP-MS is well suited to rapid process control of such materials. Quantitative results from LA-ICP-MS were compared with previously reported literature data obtained by use of ICP-OES and rf-GD-OES. In particular, the distribution of element impurities and their relationship to their different segregation coefficients in silicon is demonstrated