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3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

Bufler, F. ; Smith, L.

In: Journal of Computational Electronics, 2013, vol. 12, no. 4, p. 651-657

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    Titre
    • 3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
    Auteur
    • Bufler, F.. Synopsys Schweiz GmbH, 8050, Zürich, Switzerland
    • Smith, L.. Synopsys Inc., 94043, Mountain View, CA, USA
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Journal of Computational Electronics, 2013, vol. 12, no. 4, p. 651-657. Springer US; http://www.springer-ny.com
    Autre version électronique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:310318
    Summary
    The performance of FinFET and FDSOI devices is compared by 3D Monte Carlo simulation using an enhanced quantum correction scheme. This scheme has two new features: (i) the quantum correction is extracted from a 2D cross-section of the 3D device and (ii) in addition to using a modified oxide permittivity and a modified work function in subthreshold, the work function is ramped above threshold to a different value in the on-state. This approach improves the accuracy of the quantum-correction for multi-gate devices and is shown to accurately reproduce 3D density-gradient simulation also at short channel lengths. 15nm FDSOI device performance with thin box and back-gate bias is found to be competitive: compared to a FinFET with (110)/〈110〉 sidewall/channel orientation, the on-current for N-type devices is 25 % higher and the off-current is only increased by a factor of 2.5