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Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities

Zogg, H. ; Arnold, M. ; Felder, F. ; Rahim, M. ; Ebneter, C. ; Zasavitskiy, I. ; Quack, N. ; Blunier, S. ; Dual, J.

In: Journal of Electronic Materials, 2008, vol. 37, no. 9, p. 1497-1503

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    Titre
    • Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities
    Auteur
    • Zogg, H.. Thin Film Physics Group, ETH Zurich, Technopark, Zurich, 8005, Switzerland
    • Arnold, M.. Thin Film Physics Group, ETH Zurich, Technopark, Zurich, 8005, Switzerland
    • Felder, F.. Thin Film Physics Group, ETH Zurich, Technopark, Zurich, 8005, Switzerland
    • Rahim, M.. Thin Film Physics Group, ETH Zurich, Technopark, Zurich, 8005, Switzerland
    • Ebneter, C.. Thin Film Physics Group, ETH Zurich, Technopark, Zurich, 8005, Switzerland
    • Zasavitskiy, I.. P.N. Lebedev Physical Institute, Russian Academy of Sciences, 117924, Moscow, Russia
    • Quack, N.. Institute of Mechanical Systems, ETH Zurich, 8092, Zurich, Switzerland
    • Blunier, S.. Institute of Mechanical Systems, ETH Zurich, 8092, Zurich, Switzerland
    • Dual, J.. Institute of Mechanical Systems, ETH Zurich, 8092, Zurich, Switzerland
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Journal of Electronic Materials, 2008, vol. 37, no. 9, p. 1497-1503. Springer US; http://www.springer-ny.com
    Autre version électronique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:310068
    Summary
    Lead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirror. Tuning is across the 4μm to 5.5μm wavelength range, and linewidth is <0.1μm. Due to the thin (0.3μm) PbTe photodiode inside the cavity, a higher sensitivity at higher operating temperatures was achieved as compared to conventional thick photodiodes. The second device is an optically pumped vertical external-cavity surface-emitting laser with PbTe-based gain layers. It emits at ∼5μm wavelength and with output power up to 50mW pulsed, or 3mW continuous wave at 100K