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Thermoelectric properties of CaMnO3 films obtained by soft chemistry synthesis

Alfaruq, Dimas S. ; Otal, Eugenio H. ; Aguirre, Myriam H. ; Populoh, Sascha ; Weidenkaff, Anke

In: Journal of Materials Research, 2012, vol. 27, no. 7, p. 985-990

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    Titre
    • Thermoelectric properties of CaMnO3 films obtained by soft chemistry synthesis
    Auteur
    • Alfaruq, Dimas S.. Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
    • Otal, Eugenio H.. Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
    • Aguirre, Myriam H.. Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
    • Populoh, Sascha. Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
    • Weidenkaff, Anke. Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Journal of Materials Research, 2012, vol. 27, no. 7, p. 985-990. Cambridge University Press
    Autre version électronique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:292390
    Summary
    Polycrystalline randomly oriented CaMnO3 films were successfully deposited on sapphire substrates by soft chemistry methods. The precursor solutions were obtained from a mixture of metal acetates dissolved in acids. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300 K < T < 1000 K. Modifications of thermal annealing procedures during the deposition of precursor layers resulted in different power factor values. Thermal annealing of CaMnO3 films at 900 °C for 48 h after four-layer depositions (route A) resulted in a pure perovskite phase with higher power factor and electrical resistivity than four-layer depositions of films annealed layer by layer at 900 °C for 48 h (route B). The studied films have negative Seebeck coefficients indicative of n-type conduction and electrical resistivities showing semiconducting behavior