Université de Fribourg

Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors

Nuccio, L. ; Willis, M. ; Schulz, Leander ; Fratini, S. ; Messina, F. ; D’Amico, M. ; Pratt, F. L. ; Lord, J. S. ; McKenzie, I. ; Loth, M. ; Purushothaman, B. ; Anthony, J. ; Heeney, M. ; Wilson, R. M. ; Hernández, I. ; Cannas, M. ; Sedlak, K. ; Kreouzis, T. ; Gillin, W. P. ; Bernhard, Christian ; Drew, Alan J.

In: Physical Review Letters, 2013, vol. 110, no. 21, p. 216602

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence...

Université de Fribourg

Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer

Schulz, Leander ; Nuccio, L. ; Willis, M. ; Desai, P. ; Shakya, P. ; Kreouzis, T. ; Malik, Vivek Kumar ; Bernhard, Christian ; Pratt, F. L. ; Morley, N. A. ; Suter, A. ; Nieuwenhuys, G. J. ; Prokscha, T. ; Morenzoni, E. ; Gillin, W. P. ; Drew, Alan J.

In: Nature Materials, 2011, vol. 10, p. 39–44

Spintronics has shown a remarkable and rapid development, for example from the initial discovery of giant magnetoresistance in spin valves (Baibich, M. N. et al. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys. Rev. Lett. 61, 2472–2475, 1988) to their ubiquity in hard-disk read heads in a relatively short time. However, the ability to fully harness electron spin as...

Université de Fribourg

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation

Drew, Alan J. ; Hoppler, Julian ; Schulz, Leander ; Pratt, F. L. ; Desai, P. ; Shakya, P. ; Kreouzis, T. ; Gillin, W. P. ; Suter, A. ; Morley, N. A. ; Malik, Vivek Kumar ; Dubroka, Adam ; Kim, Kyung Wan ; Bouyanfif, Houssny ; Bourqui, Francis ; Bernhard, Christian ; Scheuermann, R. ; Nieuwenhuys, G. J. ; Prokscha, T. ; Morenzoni, E.

In: Nature Materials, 2009, vol. 8, p. 109 - 114

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the...