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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07≤x≤0.21) by means of a detailed charge balance equation

Gonschorek, Marcus ; Carlin, Jean-Francois ; Feltin, Eric ; Py, Marcel ; Grandjean, Nicolas

In: International Journal of Microwave and Wireless Technologies, 2010, vol. 2, no. 1, p. 13-20

Millimeter-wave GaN-based HEMT development at ETH-Zürich

Sun, Haifeng ; Marti, Diego ; Tirelli, Stefano ; Alt, Andreas R. ; Benedickter, Hansruedi ; Bolognesi, C.R.

In: International Journal of Microwave and Wireless Technologies, 2010, vol. 2, no. 1, p. 33-38

Integration of organic optoelectronic : devices for biosensing applications

Ramuz, Marc ; Seitz, Peter (Dir.)

Thèse de doctorat : , 2009 ; Th. 2126.

The integration of organic optoelectronic devices – such as polymer light emitting diodes (PLEDs) and polymer photodiodes (PPDs) – onto a biochip is investigated. The biochip consists of a glass substrate, a planar single-mode waveguide and an optical grating to outcouple the guided light. Solution-processing of organic electronic devices allow to deposit PLEDs and PPDs by additive processes...

Design and characterisation of far- and mid-infrared quantum cascade detectors

Graf, Marcel ; Hofstetter, Daniel (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2008 ; Th. 2054.

This thesis covers a novel type of infrared photodetectors, based on intersubband transitions in III-V semiconductors (AlAs/GaAs on GaAs and InAlAs/InGaAs on InP). To address one of the main noise sources of photoconductive photodetectors, dark current noise, this design comprises an internal potential gradient in form of a quantum cascade, hence the name quantum cascade detector (QCD). This...

Short wavelength (4 µm) quantum cascade detector based on strain compensated InGaAs/InAlAs

Giorgetta, Fabrizio R. ; Baumann, Esther ; Théron, Ricardo ; Pellaton, M. L. ; Hofstetter, Daniel ; Fischer, M. ; Faist, Jérôme

In: Applied Physics Letters, 2008, vol. 92, no. 121101, p. 1-3

We report on a quantum cascade detector based on nearly strain compensated InGaAs/InAlAs pseudomorphically grown on InP substrate and detecting light at short wavelengths around 4 µm. The background limited infrared performance (BLIP) condition is met at a temperature of 108 K with a high detectivity of D*BLIP =1.2×1011 Jones.

Optical pumping : a possible approach towards a SiGe Quantum Cascade Laser

Scheinert, Maxi ; Faist, Jérôme (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2007 ; Th.1979.

Since the first Quantum Cascade Laser (QCL) was realized in 1994 in the AlInAs/InGaAs material system, it has attracted a wide interest as infrared light source. Main applications can be found in spectroscopy for gas-sensing, in the data transmission and telecommunication as free space optical data link as well as for infrared monitoring. This type of light source differs in fundamental ways from...

Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates

Biasiol, Giorgio ; Kapon, Elyahou (Dir.)

Thèse Ecole polytechnique fédérale de Lausanne EPFL : 1998 ; no 1859.

Propriétés électriques et optiques de couches minces de WS2 et MoS2 en vue d'applications photovoltaïques

Ballif, Christophe ; Lévy, Francis (Dir.)

Thèse Ecole polytechnique fédérale de Lausanne EPFL : 1998 ; no 1787.

Photorécepteurs 1,3-1,55 µm obtenus par intégration monolithique de photodiodes p-i-n et de transistors HEMT

Spicher, Jacques ; Ilegems, Marc (Dir.)

Thèse Ecole polytechnique fédérale de Lausanne EPFL : 1996 ; no 1551.

Développement de photodétecteurs monolithiques par intégration verticale de couches de silicium amorphe hydrogéné

Miazza, Clément ; Shah, A (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2005 ; 1853.

The main topic of this work is the so called ''Thin Film on CMOS Technology'' (TFC) where amorphous silicon (a-Si:H) detectors are vertically integrated directly on top of a CMOS readout chip so as to form image sensors. This approach leads to enhanced performance for the TFC sensor. In fact, very high geometrical fill factors (FF = 92 %), increased sensitivity (S > 60 V/(µJ/cm2) between 575 et...