Université de Fribourg

Muonium avoided level crossing measurement of electron spin relaxation rate in a series of substituted anthradithiophene based molecules

Han, S. ; Wang, K. ; Willis, M. ; Nuccio, Laura ; Pratt, F.L. ; Lord, J.S. ; Thorley, K.J. ; Anthony, J. ; Drew, A.J. ; Zhang, S. ; Schulz, Leander

In: Synthetic Metals, 2015, vol. 208, p. 39–42

Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on tert-butyl-ethynyl anthradithiophene, tri-methyl-silyl-ethynyl anthradithiophene and tri-ethygermyl-ethynyl anthradithiophene at different temperatures are...

Université de Fribourg

Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors

Nuccio, L. ; Willis, M. ; Schulz, Leander ; Fratini, S. ; Messina, F. ; D’Amico, M. ; Pratt, F. L. ; Lord, J. S. ; McKenzie, I. ; Loth, M. ; Purushothaman, B. ; Anthony, J. ; Heeney, M. ; Wilson, R. M. ; Hernández, I. ; Cannas, M. ; Sedlak, K. ; Kreouzis, T. ; Gillin, W. P. ; Bernhard, Christian ; Drew, Alan J.

In: Physical Review Letters, 2013, vol. 110, no. 21, p. 216602

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence...