In: npj Quantum Materials, 2021, vol. 6, no. 1, p. 12
The interplay of nearly degenerate orders in quantum materials can lead to a myriad of emergent phases. A prominent case is that of the high-Tc cuprates for which the relationship between superconductivity and a short-ranged, incommensurate charge density wave in the CuO2 planes involving the dx2−y2 orbitals (Cu-CDW) is a subject of great current interest. Strong modifications of the...
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In: npj Quantum Materials, 2021, vol. 6, no. 1, p. 51
Investigations of magnetically ordered phases on the femtosecond timescale have provided significant insights into the influence of charge and lattice degrees of freedom on the magnetic sub-system. However, short-range magnetic correlations occurring in the absence of long-range order, for example in spin-frustrated systems, are inaccessible to many ultrafast techniques. Here, we show how...
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In: Communications Materials, 2021, vol. 2, no. 1, p. 25
Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional transition metal dichalcogenides remains an open challenge. Here, we...
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In: Physical Review Research, 2020, vol. 2, no. 3, p. 033115
α−GeTe(111) is a noncentrosymmetric ferroelectric material for which a strong spin- orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the bulk band gap remains an open question because they are located in the unoccupied part of the electronic structure, making them inaccessible to static...
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The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 x 2 x 2 charge-density-wave (CDW) phase at room- temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetallic with ...
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In: Physical Review B, 2021, vol. 104, no. 3, p. 035125
Black phosphorus is a quasi-two-dimensional layered semiconductor with a narrow direct band gap of 0.3 eV. A giant surface Stark effect can be produced by the potassium doping of black phosphorus, leading to a semiconductor to semimetal phase transition originating from the creation of a strong surface dipole and associated band bending. By using time- and angle-resolved photoemission ...
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In: Physical Review Materials, 2021, vol. 5, no. 7, p. 074002
We present a combined angle-resolved photoemission spectroscopy and low-energy electron diffraction (LEED) study of the prominent transition metal dichalcogenide IrTe2 upon potassium (K) deposition on its surface. Pristine IrTe2 undergoes a series of charge-ordered phase transitions below room temperature that are characterized by the formation of stripes of Ir dimers of different...
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In: Physical Review Materials, 2020, vol. 4, no. 11, p. 114201
Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe5 samples, especially given the very small density of states near its chemical potential. Here we report on high- resolution scanning tunneling microscopy and spectroscopy...
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In: Advanced Functional Materials, 2020, p. 2007706
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity, and topological properties. Their physical properties can be controlled by doping in electric double‐layer field‐effect transistors (FET). However, for the case of single layer NbSe2, FET doping is limited to ≈1 × 1014 cm−2, while a somewhat larger...
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In: Physical Review B, 2020, vol. 102, no. 8, p. 085148
The transition metal chalcogenide Ta2NiSe5 undergoes a second-order phase transition at Tc=328K involving a small lattice distortion. Below Tc, a band gap at the center of its Brillouin zone increases up to about 0.35 eV. In this work, we study the electronic structure of Ta2NiSe5 in its low-temperature semiconducting phase, using resonant inelastic x-ray scattering (RIXS) at the Ni L3 edge....
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