Refine my results

Misfit layer compounds: a platform for heavily doped 2D transition metal dichalcogenides

Leriche, Raphaël T. ; Palacio‐Morales, Alexandra ; Campetella, Marco ; Tresca, Cesare ; Sasaki, Shunsuke ; Brun, Christophe ; Debontridder, François ; David, Pascal ; Arfaoui, Imad ; Šofranko, Ondrej ; Samuely, Tomas ; Kremer, Geoffroy ; Monney, Claude ; Jaouen, Thomas ; Cario, Laurent ; Calandra, Matteo ; Cren, Tristan

In: Advanced Functional Materials, 2020, p. 2007706

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity, and topological properties. Their physical properties can be controlled by doping in electric double‐layer field‐effect transistors (FET). However, for the case of single layer NbSe2, FET doping is limited to ≈1 × 1014 cm−2, while a somewhat larger...