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Muonium avoided level crossing measurement of electron spin relaxation rate in a series of substituted anthradithiophene based molecules

Han, S. ; Wang, K. ; Willis, M. ; Nuccio, Laura ; Pratt, F.L. ; Lord, J.S. ; Thorley, K.J. ; Anthony, J. ; Drew, A.J. ; Zhang, S. ; Schulz, Leander

In: Synthetic Metals, 2015, vol. 208, p. 39–42

Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on tert-butyl-ethynyl anthradithiophene, tri-methyl-silyl-ethynyl anthradithiophene and tri-ethygermyl-ethynyl anthradithiophene at different temperatures are...