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Transparent conducting Sn:ZnO films deposited from nanoparticles

Luo, Li ; Häfliger, Kathrin ; Xie, Dan ; Niederberger, Markus

In: Journal of Sol-Gel Science and Technology, 2013, vol. 65, no. 1, p. 28-35

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    Title
    • Transparent conducting Sn:ZnO films deposited from nanoparticles
    Author
    • Luo, Li. Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse 10, Zurich, Switzerland
    • Häfliger, Kathrin. Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse 10, Zurich, Switzerland
    • Xie, Dan. Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse 10, Zurich, Switzerland
    • Niederberger, Markus. Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse 10, Zurich, Switzerland
    Document Type
    • Postprint
    Language
    • English
    Published in
    • Journal of Sol-Gel Science and Technology, 2013, vol. 65, no. 1, p. 28-35. Springer US; http://www.springer-ny.com
    Other Version
    OAI-PMH Identifier
    • oai:doc.rero.ch:317400
    Summary
    Homogeneous transparent conducting Sn:ZnO films on fused silica substrates were prepared by dip-coating from nanoparticle dispersions, while the nanocrystalline Sn:ZnO particles with different dopant concentrations were synthesized by microwave-assisted non-aqueous sol-gel process using Sn(IV) tert-butoxide and Zn(II) acetate as precursors and benzyl alcohol as solvent. The dopant concentration had a great impact on the electrical properties of the films. A minimum resistivity of 20.3Ωcm was obtained for a porous Sn:ZnO film with initial Sn concentration of 7.5mol% after annealing in air and post-annealing in N2 at 600°C. The resistivity of this porous film could further be reduced to 2.6 and 0.6Ωcm after densified in Sn:ZnO and Al:ZnO reaction solution, respectively. The average optical transmittance of a 400-nm-thick Sn:ZnO film densified with Sn:ZnO after the two annealing steps was 91%