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Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Zardo, I. ; Conesa-Boj, S. ; Estradé, S. ; Yu, L. ; Peiro, F. ; Roca i Cabarrocas, P. ; Morante, J. ; Arbiol, J. ; Fontcuberta i Morral, A.

In: Applied Physics A, 2010, vol. 100, no. 1, p. 287-296

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    Title
    • Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition
    Author
    • Zardo, I.. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall, 85748, Garching, Germany
    • Conesa-Boj, S.. Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès, 08028, Barcelona, CAT, Spain
    • Estradé, S.. Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès, 08028, Barcelona, CAT, Spain
    • Yu, L.. LPICM, Ecole Polytechnique, CNRS, 91128, Palaiseau, France
    • Peiro, F.. Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès, 08028, Barcelona, CAT, Spain
    • Roca i Cabarrocas, P.. LPICM, Ecole Polytechnique, CNRS, 91128, Palaiseau, France
    • Morante, J.. Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès, 08028, Barcelona, CAT, Spain
    • Arbiol, J.. Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès, 08028, Barcelona, CAT, Spain
    • Fontcuberta i Morral, A.. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall, 85748, Garching, Germany
    Document Type
    • Postprint
    Classification
    • Engineering
    OAI-PMH Identifier
    • oai:doc.rero.ch:313456
    Summary
    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm−1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth