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Subsolidus phase equilibria in the PbO-poor part of the TiO2-PbO-SiO2 system and its application in low-temperature thick-film dielectrics

Hrovat, Marko ; Maeder, Thomas ; Jacq, Caroline ; Holc, Janez ; Bernard, Janez

In: Journal of Materials Research, 2006, vol. 21, no. 12, p. 3210-3214

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    Titre
    • Subsolidus phase equilibria in the PbO-poor part of the TiO2-PbO-SiO2 system and its application in low-temperature thick-film dielectrics
    Auteur
    • Hrovat, Marko. Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
    • Maeder, Thomas. Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland
    • Jacq, Caroline. Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland
    • Holc, Janez. Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
    • Bernard, Janez. Slovenian National Building and Civil Engineering Institute, Dimičeva 12, SI-1000 Ljubljana, Slovenia
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Journal of Materials Research, 2006, vol. 21, no. 12, p. 3210-3214. Cambridge University Press
    Autre version électronique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:298398
    Summary
    Subsolidus equilibria in the PbO-poor part of the TiO2-PbO-SiO2 diagram were studied with the aim of investigating possible applications for low-temperature thick-film dielectrics. The tie lines are between PbTiO2 and PbSiO3, and between PbTiO3 and SiO2. The results show that the TiO2, when added to low-temperature softening point glasses, reacts with the PbO from the glass, so forming PbTiO3. These results were applied to a low-temperature firing dielectric, consisting of a lead-rich PbO-SiO2-B2O3 glass filled with a TiO2 powder. The conversion of TiO2 to the PbTiO3 crystalline phase was observed above firing temperatures of approximately 600 °C. The kinetics of the reaction depend on the particle size of the TiO2