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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07≤x≤0.21) by means of a detailed charge balance equation

Gonschorek, Marcus ; Carlin, Jean-Francois ; Feltin, Eric ; Py, Marcel ; Grandjean, Nicolas

In: International Journal of Microwave and Wireless Technologies, 2010, vol. 2, no. 1, p. 13-20

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    Title
    • Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07≤x≤0.21) by means of a detailed charge balance equation
    Author
    • Gonschorek, Marcus. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
    • Carlin, Jean-Francois. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
    • Feltin, Eric. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
    • Py, Marcel. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
    • Grandjean, Nicolas. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
    Document Type
    • Postprint
    Language
    • English
    Published in
    • International Journal of Microwave and Wireless Technologies, 2010, vol. 2, no. 1, p. 13-20. Cambridge University Press
    Other Version
    OAI-PMH Identifier
    • oai:doc.rero.ch:294010
    Summary
    This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance-voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6×1013 cm−2 for lattice-matched (LM) heterostructures and barrier thickness of 14nm, beyond 2 A/mm saturation currents, above 100GHz operation for heterostructures grown on Si (111) with gate length of 0.1µm. Despite these striking experimental results, a consistent determination of the most important electrical parameters, namely polarization sheet charge density, surface potential, and dielectric constant of the alloy are still missing. By setting up the correct charge balance equation, these parameters can unambiguously be determined. For instance, in the case of nearly LM Al0.85In0.15N these parameters amount to σAl0.85In0.15N/GaN~3.7×1017 m−2, eΦS~3 eV and Al0.85In0.15N ~11.2, for the charge density, the surface barrier potential, and the dielectric constant, respectively