In: Physical Review A, 2015, vol. 92, no. 3, p. 032710
Radiative recombination (RR) into the K shell and L subshells of U92+ ions interacting with cooling electrons has been studied in an x-ray RR experiment at the electron cooler of the Experimental Storage Ring at GSI. The measured radiative recombination rate coefficients for electron-ion relative energies in the range 0–1000 meV demonstrate the importance of relativistic effects. The...
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In: Journal of Physics: Conference Series, 2015, vol. 635, no. 10, p. 102009
We report on nonlinear interaction of solid Fe with intense femtosecond hard x-ray free-electron laser (XFEL) pulses. The experiment was performed at the CXI end- station of the Linac Coherent Light Source (LCLS) by means of high- resolution x-ray emission spectroscopy. The focused x-ray beam provided extreme fluence of ~10⁵ photons/Ų. Two-photon absorption leading to K-shell hollow atom...
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In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2014, vol. 88, p. 136-149
The grazing emission X-ray fluorescence (GEXRF) technique was applied to the analysis of different Al films, with nominal thicknesses in the range of 1 nm to 150 nm, on Si wafers. In GEXRF the sample volume from which the fluorescence intensity is detected is restricted to a near-surface region whose thickness can be tuned by varying the observation angle. This is possible because of the...
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In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2014, vol. 98, p. 65-75
Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle- and layer-like samples, the measured angular intensity profiles show...
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In: Structural Dynamics, 2014, vol. 1, no. 2, p. 021101
Physical, biological, and chemical transformations are initiated by changes in the electronic configuration of the species involved. These electronic changes occur on the timescales of attoseconds (10−18 s) to femtoseconds (10−15 s) and drive all subsequent electronic reorganization as the system moves to a new equilibrium or quasi-equilibrium state. The ability to detect the dynamics of...
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In: Journal of Physics: Conference Series, 2012, vol. 388, no. 6, p. 062044
Observed enhancement of K-shell radiative recombination (RR) of bare uranium ions with cooling electrons is interpreted in terms of of distant transverse collisions in magnetized electron-cooler plasma described within the semiclassical geometrical model (SGM), which was recently proposed. The Monte Carlo simulations based on the proposed approach explains the enhancement measured in RR of...
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In: X-Ray Spectrometry, 2012, vol. 41, no. 2, p. 98-104
We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown...
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In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2010, p. -
The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with...
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In: Physical Review B, 2009, vol. 11, p. 113305
We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10¹² atoms/cm² was reached by observing the Al Kα x-ray fluorescence in the resonant Raman-scattering background-“free” regime by...
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In: Journal of Applied Physics, 2009, vol. 105, p. 086101
We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron...
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