Perfeziona i miei risultati

Document type

Collection spécifique

Lingua

Consortium of Swiss Academic Libraries

Lagrangian Reductions and Integrable Systems in Condensed Matter

Gay-Balmaz, François ; Monastyrsky, Michael ; Ratiu, Tudor

In: Communications in Mathematical Physics, 2015, vol. 335, no. 2, p. 609-636

Consortium of Swiss Academic Libraries

Algebraic twists of modular forms and Hecke orbits

Fouvry, Étienne ; Kowalski, Emmanuel ; Michel, Philippe

In: Geometric and Functional Analysis, 2015, vol. 25, no. 2, p. 580-657

Université de Fribourg

Dimercaptosuccinic acid in combination with carbapenems against isogenic strains of Escherichia coli producing or not producing a metallo-β-lactamase in vitro and in murine peritonitis

Cheminet, G. ; de Lastours, V. ; Poirel, Laurent ; Chau, F. ; Peoc’h, K. ; Massias, L. ; Fantin, B. ; Nordmann, Patrice

In: Journal of Antimicrobial Chemotherapy, 2020, vol. 75, no. 12, p. 3593–3600

Background: Carbapenemase-producing Enterobacterales represent a major therapeutic challenge. MBLs, requiring zinc at their catalytic site, could be inhibited by meso-dimercaptosuccinic acid (DMSA), a heavy metal chelator already widely used for treating lead intoxication.Objectives: To evaluate the activity of carbapenems alone or combined with DMSA against MBL-producing Escherichia coli in...

Université de Fribourg

Misfit layer compounds: a platform for heavily doped 2D transition metal dichalcogenides

Leriche, Raphaël T. ; Palacio‐Morales, Alexandra ; Campetella, Marco ; Tresca, Cesare ; Sasaki, Shunsuke ; Brun, Christophe ; Debontridder, François ; David, Pascal ; Arfaoui, Imad ; Šofranko, Ondrej ; Samuely, Tomas ; Kremer, Geoffroy ; Monney, Claude ; Jaouen, Thomas ; Cario, Laurent ; Calandra, Matteo ; Cren, Tristan

In: Advanced Functional Materials, 2020, p. 2007706

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity, and topological properties. Their physical properties can be controlled by doping in electric double‐layer field‐effect transistors (FET). However, for the case of single layer NbSe2, FET doping is limited to ≈1 × 1014 cm−2, while a somewhat larger...