In: Physical Review B, 2009, vol. 11, p. 113305
We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10¹² atoms/cm² was reached by observing the Al Kα x-ray fluorescence in the resonant Raman-scattering background-“free” regime by...
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In: Journal of Applied Physics, 2009, vol. 105, p. 086101
We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron...
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