Université de Fribourg

Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation

Kubala-Kukus, A. ; Banas, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Kayser, Yves ; Pajek, M. ; Salomé, M. ; Susini, J. ; Szlachetko, Jakub ; Szlachetko, Monika

In: Physical Review B, 2009, vol. 11, p. 113305

We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10¹² atoms/cm² was reached by observing the Al Kα x-ray fluorescence in the resonant Raman-scattering background-“free” regime by...

Université de Fribourg

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Szlachetko, Jakub ; Banaś, D. ; Kubala-Kukuś, A. ; Pajek, M. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Kayser, Yves ; Szlachetko, Monika ; Kavčič, M. ; Salome, M. ; Susini, J.

In: Journal of Applied Physics, 2009, vol. 105, p. 086101

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron...