Université de Fribourg

High-energy-resolution grazing emission X-ray fluorescence applied to the characterization of thin Al films on Si

Kayser, Yves ; Szlachetko, Jakub ; Banaś, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Kubala-Kukuś, A. ; Pajek, M.

In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2014, vol. 88, p. 136-149

The grazing emission X-ray fluorescence (GEXRF) technique was applied to the analysis of different Al films, with nominal thicknesses in the range of 1 nm to 150 nm, on Si wafers. In GEXRF the sample volume from which the fluorescence intensity is detected is restricted to a near-surface region whose thickness can be tuned by varying the observation angle. This is possible because of the...

Université de Fribourg

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Nowak, Stanislaw H. ; Banaś, D. ; Błachucki, Wojciech Maria ; Cao, Wei ; Dousse, Jean-Claude ; Hönicke, P. ; Hoszowska, Joanna ; Jabłoński, Ł. ; Kayser, Yves ; Kubala-Kukuś, A. ; Pajek, M. ; Reinhardt, F. ; Savu, A.V. ; Szlachetko, Jakub

In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2014, vol. 98, p. 65-75

Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle- and layer-like samples, the measured angular intensity profiles show...

Université de Fribourg

Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique

Kayser, Yves ; Banaś, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Jagodziński, P. ; Kavčič, Matjaz ; Kubala-Kukuś, A. ; Nowak, S. ; Pajek, M. ; Szlachetko, Jakub

In: X-Ray Spectrometry, 2012, vol. 41, no. 2, p. 98-104

We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown...

Université de Fribourg

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Kayser, Yves ; Banaś, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Jagodziński, P. ; Kavčič, Matjaz ; Kubala-Kukuś, A. ; Nowak, S. ; Pajek, M. ; Szlachetko, Jakub

In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2010, p. -

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with...

Université de Fribourg

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Szlachetko, Jakub ; Banaś, D. ; Kubala-Kukuś, A. ; Pajek, M. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Kayser, Yves ; Szlachetko, Monika ; Kavčič, M. ; Salome, M. ; Susini, J.

In: Journal of Applied Physics, 2009, vol. 105, p. 086101

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron...