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Université de Neuchâtel

Characterizazion of time resolved photodetector systems for Positron Emission Tomography

Powolny, François ; Ballif, Christophe (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2009 ; Th. 2107.

The main topic of this work is the study of detector systems composed of a scintillator, a photodetector and readout electronics, for Positron Emission Tomography (PET). In particular, the timing properties of such detector systems are studied. The first idea is to take advantage of the good timing properties of the NINO chip, which is a fast preamplifier-discriminator developed for the ALICE...

Université de Neuchâtel

A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC

Anelli, G. ; Commichau, S. C. ; Despeisse, M. ; Dissertori, G. ; Jarron, P. ; Miazza, C. ; Moraes, D. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004, vol. 518, no. 1-2, p. 366-372

A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC). For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by...

Université de Neuchâtel

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Despeisse, M. ; Anelli, G. ; Commichau, S. C. ; Dissertori, G. ; Garrigos, A. ; Jarron, P. ; Miazza, C. ; Moraes, D. ; Shah, Arvind ; Wyrsch, Nicolas ; Viertel, G. M.

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004, vol. 518, no. 1-2, p. 357-361

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n–i–p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of...

Université de Neuchâtel

TFA pixel sensor technology for vertex detectors

Jarron, P. ; Moraes, D. ; Despeisse, M. ; Dissertori, G. ; Dunand, S. ; Kaplon. J. ; Miazza, C. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, vol. 560, no. 1, p. 122-126

Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is...

Université de Neuchâtel

Thin-film silicon detectors for particle detection

Wyrsch, Nicolas ; Dunand, S. ; Miazza, C. ; Shah, A. ; Anelli, G. ; Despeisse, M. ; Garrigos, A. ; Jarron, P. ; Kaplon. J. ; Moraes, D. ; Commichau, S. C. ; Dissertori, G. ; Viertel, G. M.

In: Physica status solidi (c), 2004, vol. 1, no. 5, p. 1284-1291

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes...

Université de Neuchâtel

Design, fabrication, and testing of intersubband infrared photodetectors operating at wavelengths between 2 ųm and 17 ųm

Giorgetta, Fabrizio ; Hofstetter, Daniel (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2007 ; Th.1982.

Intersubband (ISB) photon detectors based on photon – electron interactions between quantized electron subbands in the conduction band of semiconductor heterostructures are presented. As opposed to interband devices, the operating wavelength of ISB devices is set by choosing appropriate layer thicknesses of the heterostructure and is not fixed by the semiconductor material system. As only...