Université de Neuchâtel

Latest developments in GaN-based quantum devices for infrared optoelectronics

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Nevou, Laurent ; Doyennette, Laeticia ; Tchernycheva, Maria ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel

In: Journal of Materials Science : Materials in Electronics, 2008, vol. 19, no. 8-9, p. 821-827

In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical...

Université de Neuchâtel

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Kandaswamy, Prem K. ; Guillot, Fabien ; Bellet-Amalric, Edith ; Monroy, Eva ; Nevou, Laurent ; Tchernycheva, Maria ; Michon, A. ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Remmele, T. ; Albrecht, M. ; Birner, S. ; Dang, Le Si

In: Journal of Applied Physics, 2008, vol. 104, no. 9, p. 093501 1-8

We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near infrared. The samples under study display infrared absorption in the 1.3–1.9 μm wavelength range, originating from the photoexcitation of electrons from the first to the second electronic level in the QWs. A...

Université de Neuchâtel

MBE growth of nitride-based photovoltaic intersubband detectors

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Bellet-Amalric, Edith ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Nevou, Laurent ; Tchernycheva, Maria ; Doyennette, Laeticia ; Julien, François H. ; Remmele, T. ; Albrecht, M.

In: Superlattices and Microstructures, 2006, vol. 40, no. 4-6, p. 418-425

In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integration of the final device. The growth of Si-doped GaN/AlN multiple quantum well (QW) structures is optimized by controlling substrate temperature,...

Université de Neuchâtel

III-Nitride Nanostructures for Infrared Optoelectronics

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Bellet-Amalric, Edith ; Nevou, Laurent ; Doyennette, Laeticia ; Tchernycheva, Maria ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Dang, Le Si

In: Acta Physica Polonica A (Proceedings of the XXXV International School of Semiconducting Compounds), 2006, vol. 110, no. 3, p. 295-301

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the...