Université de Neuchâtel

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Bour, David P. ; Kneissl, Michael ; Hofstetter, Daniel ; Romano, Linda T. ; McCluskey, Matthew D. ; van de Walle, C. G. ; Krusor, B. S. ; Dunnrowicz, Clarence ; Donaldson, Rose M. ; Walker, J. ; Johnson, N. M.

In: Materials Science and Engineering B, 1999, vol. 59, no. 1-3, p. 33-38

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density...

Université de Neuchâtel

Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

McCluskey, Matthew D. ; Romano, Linda T. ; Krusor, B. S. ; Hofstetter, Daniel ; Bour, David P. ; Kneissl, Michael ; Johnson, N. M. ; Suski, T. ; Jun, J.

In: MRS Internet Journal of Nitride Semiconductor Research, 1999, vol. 4S1, no. G3.42, p. 1-6

Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15...

Université de Neuchâtel

Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers

Romano, Linda T. ; Hofstetter, Daniel ; McCluskey, Matthew D. ; Bour, David P. ; Kneissl, Michael

In: Applied Physics Letters, 1998, vol. 73, p. 2706-2708

Laser-diode heterostructures of InGaAlN containing a third-order diffraction grating for distributed optical feedback have been examined with transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The grating was defined holographically and etched by chemically assisted ion-beam etching into the upper GaN confinement layer of the laser structure. After the etch step, it...