Université de Neuchâtel

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Bour, David P. ; Kneissl, Michael ; Hofstetter, Daniel ; Romano, Linda T. ; McCluskey, Matthew D. ; van de Walle, C. G. ; Krusor, B. S. ; Dunnrowicz, Clarence ; Donaldson, Rose M. ; Walker, J. ; Johnson, N. M.

In: Materials Science and Engineering B, 1999, vol. 59, no. 1-3, p. 33-38

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density...

Université de Neuchâtel

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

Hofstetter, Daniel ; Thornton, Robert L. ; Romano, Linda T. ; Bour, David P. ; Kneissl, Michael ; Donaldson, Rose M. ; Dunnrowicz, Clarence

In: MRS Internet Journal of Nitride Semiconductor Research, 1999, vol. 4S1, no. G2.2, p. 1-6

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as...

Université de Neuchâtel

Multiwavelength light emitters for scanning applications fabricated by flipchip bonding

Hofstetter, Daniel ; Sun, D. ; Dunnrowicz, Clarence ; Kneissl, Michael ; Treat, D.W.

In: Applied Physics Letters, 1998, vol. 10, no. 10, p. 1371-1373

We present a multiwavelength light source which was fabricated using a self-aligned flipchip bonding technique. The device consists of an InGaN-GaN light-emitting diode emitting light at around 420 nm, on top of which we flipchip-bonded a monolithically integrated red/infrared dual-beam laser. The upper two lasers were built by selective removal of the red laser, and subsequent regrowth of an...

Université de Neuchâtel

Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings

Hofstetter, Daniel ; Thornton, Robert L. ; Kneissl, Michael ; Bour, David P. ; Dunnrowicz, Clarence

In: Applied Physics Letters, 1998, vol. 73, p. 1928-1930

We demonstrate an optically pumped InGaN/GaN-based multiquantum well distributed feedback laser in the blue spectral region. The third-order grating providing feedback was defined holographically and dry etched into the upper waveguiding layer by chemically assisted ion-beam etching. When aligning the stripe-shaped pump beam either parallel or perpendicular to the grating grooves, we found a...