Université de Neuchâtel

Latest developments in GaN-based quantum devices for infrared optoelectronics

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Nevou, Laurent ; Doyennette, Laeticia ; Tchernycheva, Maria ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel

In: Journal of Materials Science : Materials in Electronics, 2008, vol. 19, no. 8-9, p. 821-827

In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical...

Université de Neuchâtel

MBE growth of nitride-based photovoltaic intersubband detectors

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Bellet-Amalric, Edith ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Nevou, Laurent ; Tchernycheva, Maria ; Doyennette, Laeticia ; Julien, François H. ; Remmele, T. ; Albrecht, M.

In: Superlattices and Microstructures, 2006, vol. 40, no. 4-6, p. 418-425

In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integration of the final device. The growth of Si-doped GaN/AlN multiple quantum well (QW) structures is optimized by controlling substrate temperature,...

Université de Neuchâtel

III-Nitride Nanostructures for Infrared Optoelectronics

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Bellet-Amalric, Edith ; Nevou, Laurent ; Doyennette, Laeticia ; Tchernycheva, Maria ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Dang, Le Si

In: Acta Physica Polonica A (Proceedings of the XXXV International School of Semiconducting Compounds), 2006, vol. 110, no. 3, p. 295-301

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the...