Université de Neuchâtel

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Bour, David P. ; Kneissl, Michael ; Hofstetter, Daniel ; Romano, Linda T. ; McCluskey, Matthew D. ; van de Walle, C. G. ; Krusor, B. S. ; Dunnrowicz, Clarence ; Donaldson, Rose M. ; Walker, J. ; Johnson, N. M.

In: Materials Science and Engineering B, 1999, vol. 59, no. 1-3, p. 33-38

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density...

Université de Neuchâtel

Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching

Kneissl, Michael ; Hofstetter, Daniel ; Bour, David P. ; Donaldson, Rose M. ; Walker, J. ; Johnson, N. M.

In: Journal of Crystal Growth, 1998, vol. 189-190, p. 846-849

Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40–60 Å. The inclination angle of the etched mirrors is within ±2° of vertical, as SEM studies indicate. Photopumping measurements...

Université de Neuchâtel

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

Hofstetter, Daniel ; Thornton, Robert L. ; Romano, Linda T. ; Bour, David P. ; Kneissl, Michael ; Donaldson, Rose M. ; Dunnrowicz, Clarence

In: MRS Internet Journal of Nitride Semiconductor Research, 1999, vol. 4S1, no. G2.2, p. 1-6

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as...

Université de Neuchâtel

Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

Hofstetter, Daniel ; Thornton, Robert L. ; Romano, Linda T. ; Bour, David P. ; Kneissl, Michael ; Donaldson, Rose M.

In: Applied Physics Letters, 1998, vol. 73, p. 2158-2160

We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm. The threshold current of a 1000-µm-long and 20-µm-wide device was 3.2 A; corresponding to a threshold current density of 16 kA/cm2. The 3rd order grating providing feedback was defined holographically and dry etched into...