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Université de Neuchâtel

Stability of a-Si:H prepared by hot-wire and glow discharge using H2 dilution evaluated by pulsed laser degradation

Hof, Ch. ; Ziegler, Y. ; Platz, R. ; Wyrsch, Nicolas ; Shah, Arvind

In: Journal of Non-Crystalline Solids, 1998, vol. 227-230, p. 287-291

The quality of intrinsic amorphous silicon films prepared by different deposition techniques was investigated. For very high frequency glow discharge, both the substrate temperature as well as the hydrogen dilution were varied. These layers were compared to hot wire material produced at comparable temperatures. To study the stability of these films, an optimised degradation method was developed...

Université de Neuchâtel

Potential of amorphous and microcrystalline silicon solar cells

Meier, Johannes ; Spitznagel, J. ; Kroll, U. ; Bucher, C. ; Faÿ Sylvie ; Moriarty, T. ; Shah, Arvind

In: Thin Solid Films, 2004, vol. 451-452, p. 518-524

Low pressure chemical vapour deposition (LP-CVD) ZnO as front transparent conductive oxide (TCO), developed at IMT, has excellent light-trapping properties for a-Si:H p-i-n single-junction and ‘micromorph’ (amorphous/microcrystalline silicon) tandem solar cells. A stabilized record efficiency of 9.47% has independently been confirmed by NREL for an amorphous silicon single-junction p-i-n cell...

Université de Neuchâtel

High-efficiency p-i-n a-Si:H solar cells with low boron cross-contamination prepared in a large-area single-chamber PECVD reactor

Kroll, U. ; Bucher, C. ; Benagli, S. ; Schönbächler, Isabelle ; Meier, Johannes ; Shah, Arvind ; Ballutaud, J. ; Howling, A. A. ; Hollenstein, C. ; Buechel, A. ; Poppeller, M.

In: Thin Solid Films, 2004, vol. 451-452, p. 525-530

In this work, a new type of short water vapor treatment of the interface between the p- and i-layer is presented. This novel treatment is performed under vacuum below 1 mbar for 5 min and considerably reduces the i-layer boron contamination in amorphous silicon (a-Si:H) p-i-n solar cells prepared in single-chamber reactors. A significant advantage is that the substrate with the p-layer can remain...

Université de Neuchâtel

Reduction of the boron cross-contamination for plasma deposition of p–i–n devices in a single-chamber large area radio-frequency reactor

Ballutaud, J. ; Bucher, C. ; Hollenstein, C. ; Howling, A. A. ; Kroll, U. ; Benagli, S. ; Shah, Arvind ; Buechel, A.

In: Thin Solid Films, 2004, vol. 468, no. 1-2, p. 222-225

In this article, a new treatment to reduce boron contamination of the interface between the p- and i- layer is presented. An ammonia flush, performed at 10 Pa for 1 min, after deposition of the p-layer considerably reduces the boron contamination at the p–i interface of amorphous silicon p–i–n solar cells prepared in a single-chamber reactor. This treatment avoids the need to move the...

Université de Neuchâtel

Preliminary radiation tests of 32 μm thick hydrogenated amorphous silicon films

Despeisse, M. ; Jarron, P. ; Johansen, K. M. ; Moraes, D. ; Shah, Arvind ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, vol. 552, no. 1-2, p. 88-92

Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.

Université de Neuchâtel

Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

Meier, Johannes ; Kroll, U. ; Vallat-Sauvain, Evelyne ; Spitznagel, J ; Graf, U. ; Shah, Arvind

In: Solar Energy, 2004, vol. 77, no. 6, p. 983-993

During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called “very high frequency glow discharge (VHF-GD)” technique, a method that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon...

Université de Neuchâtel

Développement de photodétecteurs monolithiques par intégration verticale de couches de silicium amorphe hydrogéné

Miazza, Clément ; Shah, A (Dir.)

Thèse de doctorat : Université de Neuchâtel, 2005 ; 1853.

Le sujet principal de ce travail est la technologie ''Thin Film on CMOS'' (TFC) en anglais. Cette approche technologique, où des détecteurs en silicium amorphe hydrogéné (a-Si:H) sont intégrés verticalement directement au dessus d'une puce CMOS dédiée, est utilisée ici pour la fabrication de capteurs d'image. Grâce à cette approche les performances des capteurs TFC ainsi obtenus sont...