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    Université de Neuchâtel

    Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?

    Meier, J. ; Flückiger, R. ; Keppner, H. ; Shah, Arvind

    In: Applied Physics Letters, 1994, vol. 65, no. 7, p. 860-862

    Complete µc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic µc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be...

    Université de Neuchâtel

    Device grade microcrystalline silicon owing to reduced oxygen contamination

    Torres, P. ; Meier, J. ; Flückiger, R. ; Kroll, U. ; Anna Selvan, J. A. ; Keppner, H. ; Shah, Arvind ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P.

    In: Applied Physics Letters, 1996, vol. 69, no. 10, p. 1373-1375

    As-deposited undoped microcrystalline silicon (µc-Si:H) has in general a pronounced n-type behavior. Such a material is therefore often not appropriate for use in devices, such as p-i-n diodes, as an active, absorbing i layer or as channel material for thin-film transistors. In recent work, on p-i-n solar cells, this disturbing n-type character had been...

    Université de Neuchâtel

    The “Micromorph” cell: a new way to high-efficiency-low-temperature crystalline silicon thin-film cell manufacturing?

    Keppner, H. ; Kroll, U. ; Torres, P. ; Meier, J. ; Platz, R. ; Fischer, D. ; Beck, N. ; Dubail, S. ; Anna Selvan, J. A. ; Pellaton Vaucher, N. ; Goerlitzer, M. ; Ziegler, Y. ; Tscharner, R. ; Hof, Ch. ; Goetz, M. ; Pernet, P. ; Wyrsch, Nicolas ; Vuille, J. ; Cuperus, J. ; Shah, Arvind ; Pohl, J.

    In: AIP Conference Proceeding, 1997, vol. 394, no. 1, p. 271-281

    Hydrogenated microcrystalline Silicon (µc-Si:H) produced by the VHF-GD (Very High Frequency Glow Discharge) process can be considered to be a new base material for thin-film crystalline silicon solar cells. The most striking feature of such cells, in contrast to conventional amorphous silicon technology, is their stability under light-soaking. With respect to crystalline silicon technology,...

    Université de Neuchâtel

    Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge

    Kroll, U. ; Meier, J. ; Keppner, H. ; Shah, Arvind ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P.

    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, vol. 13, no. 6, p. 2742-2746

    The authors have studied the effect of plasma power, reactor outgassing rates, and of silane purity on the oxygen, carbon, and nitrogen contents of amorphous silicon material prepared by the very high frequency (70 MHz) glow discharge technique. The silane purity could be optionally enhanced by the application of a getter-based silane gas purifier. It was found that oxygen incorporation was...

    Université de Neuchâtel

    Microcrystalline silicon and micromorph tandem solar cells

    Keppner, H. ; Meier, Johannes ; Torres, P. ; Fischer, D. ; Shah, A.

    In: Applied Physics A: Materials Science & Processing, 1999, vol. 69, no. 2, p. 169-177

    “Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the...

    Université de Neuchâtel

    Fast deposition of μc-Si:H by restrictive dilution and enhanced HF-power

    Torres, P. ; Keppner, H. ; Meier, Johannes ; Kroll, U. ; Beck, N. ; Shah, A.

    In: Physica status solidi. A. Applied research, 1997, vol. 163, no. 2, p. R9-R10

    The purpose of this paper is to demonstrate that an enhanced deposition rate in excess of 10Å/s with reasonnable cell performances is however, indeed possible while remaining within the Very High Frequency-Glow Discharge (VHF-GD) deposition technique (at plasma excitation frequencies of 70 to 130MHz).