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    Université de Neuchâtel

    Device grade microcrystalline silicon owing to reduced oxygen contamination

    Torres, P. ; Meier, J. ; Flückiger, R. ; Kroll, U. ; Anna Selvan, J. A. ; Keppner, H. ; Shah, Arvind ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P.

    In: Applied Physics Letters, 1996, vol. 69, no. 10, p. 1373-1375

    As-deposited undoped microcrystalline silicon (µc-Si:H) has in general a pronounced n-type behavior. Such a material is therefore often not appropriate for use in devices, such as p-i-n diodes, as an active, absorbing i layer or as channel material for thin-film transistors. In recent work, on p-i-n solar cells, this disturbing n-type character had been...

    Université de Neuchâtel

    Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge

    Kroll, U. ; Meier, J. ; Keppner, H. ; Shah, Arvind ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P.

    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, vol. 13, no. 6, p. 2742-2746

    The authors have studied the effect of plasma power, reactor outgassing rates, and of silane purity on the oxygen, carbon, and nitrogen contents of amorphous silicon material prepared by the very high frequency (70 MHz) glow discharge technique. The silane purity could be optionally enhanced by the application of a getter-based silane gas purifier. It was found that oxygen incorporation was...