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    Université de Neuchâtel

    Measurement of ambipolar mobility-lifetime product and itssignificance for amorphous silicon cells

    Sauvain, E. ; Shah, Arvind ; Hubin, J.

    In: Conference Record of the 21th IEEE Photovoltaic Specialists Conference, 1990, vol. 2, p. 1560-1563

    In order to evaluate correctly the ambipolar diffusion length (Lamb) or the ambipolar drift length (Le) from a steady-state photocarrier grating (SSPG) diffusion or drift measurement, the condition of charge quasi-neutrality has to be maintained everywhere in the material (ambipolarity condition). This is shown theoretically by calculating the experimentally accessible...

    Université de Neuchâtel

    Monitoring a-Si:H solar cells degradation by two sides blue lightcollection

    Masini, G. ; Fischer, Diego ; Hubin, J. ; Palma, F. ; Shah, Arvind

    In: Conference Record of the Twenty Fourth IEEE Photovoltaic Specialists Conference (1994 IEEE First World Conference on Photovoltaic Energy Conversion), 1994, vol. 1, p. 610-613

    In view of the persistent lack of correlation between single layer material properties and solar cell performance, one is at present interested in experimental techniques which allow the characterisation of material properties within a full p-i-n cell. In this paper, the authors introduce a novel method to monitor i-layer properties during degradation of a-Si:H p-i-n solar cell. Two blue,...

    Université de Neuchâtel

    The quasineutrality condition in amorphous semiconductors: Reformulation of the ‘lifetime/relaxation’ criterion

    Shah, Arvind ; Hubin, J. ; Platz, R. ; Goerlitzer, M. ; Wyrsch, Nicolas

    In: Journal of Non-Crystalline Solids, 1996, vol. 198-200, p. 548-551

    The concepts of lifetime and relaxation semiconductors introduced by van Roosbroeck and Casey are reconsidered for amorphous semiconductors and the effect of localized states on the lifetime/relaxation criterion specified: The quantity to be considered is τρ/Td, where Td is (as before) the dielectric relaxation time, but τρ is...

    Université de Neuchâtel

    Consistency between experimental data for ambipolar diffusion length and for photoconductivity when incorporated into the “standard'' defect model for a-Si:H

    Hubin, J. ; Shah, Arvind ; Sauvain, E. ; Pipoz, P.

    In: Journal of Applied Physics, 1998, vol. 78, no. 70, p. 6050-6059

    Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the “standard'' defect model for a-Si:H. In this model the dangling bonds are taken into account, considering their amphoteric behavior and...