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Université de Neuchâtel

A novel low noise hydrogenated amorphous silicon pixel detector

Moraes, D. ; Anelli, G. ; Despeisse, M. ; Dissertori, G. ; Garrigos, A. ; Jarron, P. ; Kaplon. J. ; Miazza, C. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: journal of n, 2004, vol. 338-340, p. 729-731

Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 μm pitch based on a n–i–p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles...

Université de Neuchâtel

TFA pixel sensor technology for vertex detectors

Jarron, P. ; Moraes, D. ; Despeisse, M. ; Dissertori, G. ; Dunand, S. ; Kaplon. J. ; Miazza, C. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, vol. 560, no. 1, p. 122-126

Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is...

Université de Neuchâtel

Thin-film silicon detectors for particle detection

Wyrsch, Nicolas ; Dunand, S. ; Miazza, C. ; Shah, A. ; Anelli, G. ; Despeisse, M. ; Garrigos, A. ; Jarron, P. ; Kaplon. J. ; Moraes, D. ; Commichau, S. C. ; Dissertori, G. ; Viertel, G. M.

In: Physica status solidi (c), 2004, vol. 1, no. 5, p. 1284-1291

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes...