Université de Neuchâtel

Scope of VHF plasma deposition for thin-film silicon solar cells

Keppner, Herbert ; Kroll, U. ; Torres, Pedro ; Meier, Johannes ; Fischer, Diego ; Goetz, M. ; Tscharner, R. ; Shah, Arvind

In: Conference Record of the 25th IEEE Photovoltaic Specialists Conference, 1996, p. 669-672

The world-wide attempts in obtaining thin-film crystalline silicon are reviewed. Based on literature published so far, it appears that high-temperature manufacturing steps seem to be unavoidable for obtaining high conversion efficiencies of crystalline silicon based solar cells. High process temperatures are in contradiction for the use of low-cost substrates like e.g. glass or aluminium. Such...

Université de Neuchâtel

Long term behaviour of passively heated or cooled a-Si:H modules

Hof, Ch. ; Lüdi, M. ; Goetz, M. ; Fischer, Diego ; Shah, Arvind

In: Conference Record of the 25th IEEE Photovoltaic Specialists Conference, 1996, p. 1057-1060

We compare the outdoor performance of single junction a-Si:H PV-modules which were mounted in three different ways. One was thermally well isolated against convection and radiation losses in order to reach maximum operating temperatures. A second one was fixed onto a radiator to keep its temperature as close as possible to the air temperature. A third one served as a reference and was mounted...

Université de Neuchâtel

Preparation of undoped and doped microcrystalline silicon(μc-Si:H) by VHF-GD for p-i-n solar cells

Flückiger, R. ; Meier, Johannes ; Keppner, Herbert ; Goetz, M. ; Shah, Arvind

In: Conference Record of the 23th IEEE Photovoltaic Specialists Conference, 1993, p. 839-844

The electronic transport properties of μc-Si:H materials were investigated. The μc-Si:H was deposited by the very high frequency-glow discharge (VHF-GD) technique at an RF-excitation of 70 MHz. Very thin

doped layers (100-400 Å) were studied. Conductivities higher than 10-3 (Ω cm)-1 could be achieved for films thicker than 150 Å. The as-deposited μc-Si:H is a slightly...

Université de Neuchâtel

Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells

Pellaton Vaucher, N. ; Rech, B. ; Fischer, D. ; Dubail, S. ; Goetz, M. ; Keppner, Herbert ; Wyrsch, Nicolas ; Beneking, C. ; Hadjadj, O. ; Shklover, V. ; Shah, Arvind

In: Solar Energy Materials and Solar Cells, 1997, vol. 49, no. 1-4, p. 27-33

In high-efficiency a-Si : H based stacked cells, at least one of the two layers that form the internal n/p junction has preferentially to be microcrystalline so as to obtain sufficient recombination at the junction [1–6]. The crucial point is the nucleation of a very thin μc-Si : H layer on an amorphous (i-layer) substrate [2, 4]. In this study, fast nucleation is induced through the treatment...

Université de Neuchâtel

Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

Kuendig, J. ; Goetz, M. ; Shah, Arvind ; Gerlach, L. ; Fernandez, E.

In: Solar Energy Materials and Solar Cells, 2003, vol. 79, no. 4, p. 425-438

The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-temperature annealing behaviour can be observed (at temperatures around 100 to 160°C) for microcrystalline silicon solar cells. To further...

Université de Neuchâtel

Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high-frequency-glow discharge

Flückiger, R. ; Meier, J. ; Goetz, M. ; Shah, Arvind

In: Journal of Applied Physics, 1995, vol. 77, no. 2, p. 712-716

Microcrystalline silicon (µc-Si:H) layers deposited by the very high-frequency-glow discharge technique at a radio-frequency excitation of 70 MHz are observed to be basically slightly n type. By doping (so-called ``microdoping'') with boron in the gas phase volume part per million (vppm) range, compensated material could be obtained. The influence of this doping on the electronic...

Université de Neuchâtel

The “Micromorph” cell: a new way to high-efficiency-low-temperature crystalline silicon thin-film cell manufacturing?

Keppner, H. ; Kroll, U. ; Torres, P. ; Meier, J. ; Platz, R. ; Fischer, D. ; Beck, N. ; Dubail, S. ; Anna Selvan, J. A. ; Pellaton Vaucher, N. ; Goerlitzer, M. ; Ziegler, Y. ; Tscharner, R. ; Hof, Ch. ; Goetz, M. ; Pernet, P. ; Wyrsch, Nicolas ; Vuille, J. ; Cuperus, J. ; Shah, Arvind ; Pohl, J.

In: AIP Conference Proceeding, 1997, vol. 394, no. 1, p. 271-281

Hydrogenated microcrystalline Silicon (µc-Si:H) produced by the VHF-GD (Very High Frequency Glow Discharge) process can be considered to be a new base material for thin-film crystalline silicon solar cells. The most striking feature of such cells, in contrast to conventional amorphous silicon technology, is their stability under light-soaking. With respect to crystalline silicon technology,...