In: Physical Review B, 2020, vol. 102, no. 8, p. 085148
The transition metal chalcogenide Ta2NiSe5 undergoes a second-order phase transition at Tc=328K involving a small lattice distortion. Below Tc, a band gap at the center of its Brillouin zone increases up to about 0.35 eV. In this work, we study the electronic structure of Ta2NiSe5 in its low-temperature semiconducting phase, using resonant inelastic x-ray scattering (RIXS) at the Ni L3 edge....
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In: Physical Review B, 2018, vol. 97, no. 11, p. 115154
Femtosecond time-resolved midinfrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta2NiSe5 below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the Γ point of the Brillouin zone. The optical response...
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In: Physical Review Letters, 2017, vol. 119, no. 8, p. 086401
We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of FC=0.2 mJ cm−2, the band gap narrows transiently, while it is enhanced above FC. Hartree-Fock calculations reveal that this effect can be explained by the presence...
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