Faculté des sciences

Features of charge carrier transport determined from carrier extraction current in μc-Si:H

Juška, G. ; Arlauskas, K. ; Nekrašas, N. ; Stuchlik, J. ; Niquille, Xavier ; Wyrsch, Nicolas

In: Journal of Non-Crystalline Solids, 2002, vol. 299-302, p. 375-379

Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline silicon (μc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field... Plus

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    Summary
    Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline silicon (μc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity; the photoconductivity transient is mainly determined by transient of charge carrier concentration; at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained.