Faculté des sciences

Extension of the a-Si:H electronic transport model to μc-Si:H: use of the μ0τ0 product to correlate electronic transport properties and solar cell performances

Goerlitzer, M. ; Torres, Pedro ; Droz, C. ; Shah, Arvind

In: Solar Energy Materials and Solar Cells, 2000, vol. 60, no. 2, p. 195-200

The aim of this communication is to show that it is possible to extend the model of the electronic transport developed for amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). By describing the electronic transport with the μ0τR products (mobility×recombination time) as a function of the Fermi level, we observed the same behaviour for both... Plus

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    Summary
    The aim of this communication is to show that it is possible to extend the model of the electronic transport developed for amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). By describing the electronic transport with the μ0τR products (mobility×recombination time) as a function of the Fermi level, we observed the same behaviour for both materials, indicating a similar type of recombination. Moreover, applying the normalised μ0τ0 product (mobility×life-time) obtained by combining the photoconductivity (σphoto) and the ambipolar diffusion length (Lamb) measured in individual layers, we are able, as in the case of a-Si:H, to predict the quality of the solar cells incorporating these layers as the active < i > layer.