Faculté des sciences

High rate growth of microcrystalline silicon by VHF-GD at high pressure

Graf, U. ; Meier, Johannes ; Kroll, U. ; Bailat, J. ; Droz, C. ; Vallat-Sauvain, Evelyne ; Shah, Arvind

In: Thin Solid Films, 2003, vol. 427, no. 1-2, p. 37-40

Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate has been investigated. Deposition rates of over 25 Å/s have been achieved at relatively low total gas flows of 100 sccm. These high-rate... Plus

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    Summary
    Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate has been investigated. Deposition rates of over 25 Å/s have been achieved at relatively low total gas flows of 100 sccm. These high-rate films show device-grade quality with respect to subband gap absorption and microcrystalline structure. Dark conductivity measurements reveal midgap character and transmission electron microscopy investigations confirm a highly crystalline microstructure from the bottom to the top of the μc-Si:H films. These high-rate μc-Si:H layers are very interesting candidates for solar cell and other devices.