Faculté des sciences

Reduction of the boron cross-contamination for plasma deposition of p–i–n devices in a single-chamber large area radio-frequency reactor

Ballutaud, J. ; Bucher, C. ; Hollenstein, C. ; Howling, A. A. ; Kroll, U. ; Benagli, S. ; Shah, Arvind ; Buechel, A.

In: Thin Solid Films, 2004, vol. 468, no. 1-2, p. 222-225

In this article, a new treatment to reduce boron contamination of the interface between the p- and i- layer is presented. An ammonia flush, performed at 10 Pa for 1 min, after deposition of the p-layer considerably reduces the boron contamination at the p–i interface of amorphous silicon p–i–n solar cells prepared in a single-chamber reactor. This treatment avoids the need to move the... Plus

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    Summary
    In this article, a new treatment to reduce boron contamination of the interface between the p- and i- layer is presented. An ammonia flush, performed at 10 Pa for 1 min, after deposition of the p-layer considerably reduces the boron contamination at the p–i interface of amorphous silicon p–i–n solar cells prepared in a single-chamber reactor. This treatment avoids the need to move the substrate out of the reactor during the full deposition process of a solar cell, thereby reducing costs. The measurement of boron contamination depth profile in the i-layer was done by Secondary Ion Mass Spectroscopy and the effectiveness of the treatment was supported by quantum efficiency and I–V measurements of solar cells.