Faculté des sciences

A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC

Anelli, G. ; Commichau, S. C. ; Despeisse, M. ; Dissertori, G. ; Jarron, P. ; Miazza, C. ; Moraes, D. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004, vol. 518, no. 1-2, p. 366-372

A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC). For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by... Plus

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    Summary
    A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC). For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n–i–p a-Si:H diode array deposited on a glass substrate and on the a-Si:H above ASIC prototype detector.