Faculté des sciences

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Despeisse, M. ; Anelli, G. ; Commichau, S. C. ; Dissertori, G. ; Garrigos, A. ; Jarron, P. ; Miazza, C. ; Moraes, D. ; Shah, Arvind ; Wyrsch, Nicolas ; Viertel, G. M.

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004, vol. 518, no. 1-2, p. 357-361

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n–i–p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of... Plus

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    Summary
    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n–i–p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.