Faculté des sciences

Preliminary radiation tests of 32 μm thick hydrogenated amorphous silicon films

Despeisse, M. ; Jarron, P. ; Johansen, K. M. ; Moraes, D. ; Shah, Arvind ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, vol. 552, no. 1-2, p. 88-92

Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill. Plus

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    Summary
    Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.