Faculté des sciences

TFA pixel sensor technology for vertex detectors

Jarron, P. ; Moraes, D. ; Despeisse, M. ; Dissertori, G. ; Dunand, S. ; Kaplon. J. ; Miazza, C. ; Shah, Arvind ; Viertel, G. M. ; Wyrsch, Nicolas

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, vol. 560, no. 1, p. 122-126

Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is... Plus

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    Summary
    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×1015 p/cm2.