Faculté des sciences

Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?

Meier, J. ; Flückiger, R. ; Keppner, H. ; Shah, Arvind

In: Applied Physics Letters, 1994, vol. 65, no. 7, p. 860-862

Complete µc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic µc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be... Plus

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    Summary
    Complete µc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic µc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely µc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete µc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).