Faculté des sciences

Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature

Conde, J. P. ; Chan, K. K. ; Blum, J. M. ; Arienzo, M. ; Monteiro, P. A. ; Ferreira, J. A. ; Chu, V. ; Wyrsch, Nicolas

In: Journal of Applied Physics, 1993, vol. 73, no. 4, p. 1826-1831

The irreversible isothermal annealing of the as-deposited defects of hydrogenated amorphous silicon, a-Si:H, deposited at room temperature by concentric-electrode radio-frequency glow discharge is studied using dark and photoconductivity, space-charge limited current, and time-of-flight. The photoconductivity increases as a power law of the annealing time with exponent 0.8. The density of... Plus

Ajouter à la liste personnelle
    Summary
    The irreversible isothermal annealing of the as-deposited defects of hydrogenated amorphous silicon, a-Si:H, deposited at room temperature by concentric-electrode radio-frequency glow discharge is studied using dark and photoconductivity, space-charge limited current, and time-of-flight. The photoconductivity increases as a power law of the annealing time with exponent 0.8. The density of states at the Fermi level, measured by space-charge limited current, is inversely proportional to the annealing time. These results are compatible with bimolecular annealing kinetics. The dark conductivity obeys a Meyer–Nelder rule during the isothermal anneal.