Faculté des sciences

Hot Electrons in Amorphous Silicon

Juška, G. ; Arlauska, K. ; Kočka, J. ; Hoheisel, M. ; Chabloz, P.

In: Physical Review Letters, 1995, vol. 75, no. 16, p. 2984-2987

At extremely high electric fields (F≤0.55 MV/cm) and high temperatures (300Ta-Si:H) is obtained and therefore the shallow trapping is substantially reduced. New data clearly demonstrate that the free electron (band) mobility in a-Si:H decreases when the electric field... Plus

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    Summary
    At extremely high electric fields (F≤0.55 MV/cm) and high temperatures (300<T<450 K), full deactivation of the electron drift mobility in amorphous hydrogenated silicon (a-Si:H) is obtained and therefore the shallow trapping is substantially reduced. New data clearly demonstrate that the free electron (band) mobility in a-Si:H decreases when the electric field increases, contrary to other disordered materials (e.g., amorphous selenium). In this sense the free carrier transport in a-Si:H is similar to the hot carriers in crystals when phonon scattering prevails.