Faculté des sciences

Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings

Hofstetter, Daniel ; Zappe, H. P. ; Epler, J. E. ; Söchtig, J.

In: Electronics Letters, 1994, vol. 30, no. 22, p. 1858-1859

A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet... Plus

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    Summary
    A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications.