Faculté des sciences
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High frequency (f=2.37 GHz) room temperature operation of 1.55 µm AlN/GaN-based intersubband detector

Giorgetta, Fabrizio R. ; Baumann, Esther ; Guillot, Fabien ; Monroy, Eva ; Hofstetter, Daniel

In: Electronics Letters, 2007, vol. 43, no. 3, p. 185-187

The fabrication and high frequency operation of a room temperature 1.55 µm intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz. More

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    Title
    • High frequency (f=2.37 GHz) room temperature operation of 1.55 µm AlN/GaN-based intersubband detector
    Author
    • Giorgetta, Fabrizio R.. Institut de Physique, Université de Neuchâtel, Switzerland
    • Baumann, Esther. Institut de Physique, Université de Neuchâtel, Switzerland
    • Guillot, Fabien. Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, France
    • Monroy, Eva. Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, France
    • Hofstetter, Daniel. Institut de Physique, Université de Neuchâtel, Switzerland
    Document Type
    • Postprint
    Publication Date
    • 2007
    Language
    • English
    Published in
    • Electronics Letters, 2007, vol. 43, no. 3, p. 185-187. Institution of Engineering and Technology (IET)
    Other Version
    Classification
    • Physics
    OAI-PMH Identifier
    • oai:doc.rero.ch:20080602172456-RL
    Submission No.
    • 20080602172456-RL
    Summary
    The fabrication and high frequency operation of a room temperature 1.55 µm intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz.