Faculté des sciences

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Bour, David P. ; Kneissl, Michael ; Hofstetter, Daniel ; Romano, Linda T. ; McCluskey, Matthew D. ; van de Walle, C. G. ; Krusor, B. S. ; Dunnrowicz, Clarence ; Donaldson, Rose M. ; Walker, J. ; Johnson, N. M.

In: Materials Science and Engineering B, 1999, vol. 59, no. 1-3, p. 33-38

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density... Plus

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    Summary
    We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density obtained was 6 kA cm−2 with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.