Faculté des sciences

Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors

Wang, Z. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hofstetter, Daniel ; Hwang, Jeff ; Schaff, William J. ; Eastman, Lester F.

In: Physica E: Low-dimensional Systems and Nanostructures, 2006, vol. 32, no. 1-2, p. 562-565

Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al0.8Ga0.2N heterostructure. In these experiments, we observe around zero time delay distinct phonon sidebands, which disappear because of spectral diffusion with a time constant of 80 fs. The signal itself decays with a time constant of 380 fs. The independent... Plus

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    Summary
    Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al0.8Ga0.2N heterostructure. In these experiments, we observe around zero time delay distinct phonon sidebands, which disappear because of spectral diffusion with a time constant of 80 fs. The signal itself decays with a time constant of 380 fs. The independent boson model agrees very well with all observed results.