Faculté des sciences

Resonant tunnelling and intersubband absorption in AlN - GaN superlattices

Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Wu, Hong ; Schaff, William J. ; Eastman, Lester F. ; Kirste, Lutz

In: Physica status solidi (c), 2005, vol. 2, no. 3, p. 1014-1018

We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the... Plus

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    Summary
    We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons.