Faculté des sciences

Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown by Metal–Organic Vapor Phase Epitaxy

Lupu, A. ; Julien, François H. ; Golka, Sebastian ; Pozzovivo, G. ; Strasser, Gottfried ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Nicolay, S. ; Mosca, M. ; Feltin, E. ; Carlin, J.-F. ; Grandjean, N.

In: Photonics Technology Letters (IEEE), 2008, vol. 20, no. 2, p. 102-104

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the... Plus

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    Summary
    We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the 1.5- to 1.58-μm spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.