Faculté des sciences

Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors

Hofstetter, Daniel ; Diehl, Laurent ; Faist, Jérôme ; Schaff, William J. ; Hwang, Jeff ; Eastman, Lester F. ; Zellweger, Christoph

In: Applied Physics Letters, 2002, vol. 80, p. 2991-2993

Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first transistor with a barrier consisting of Al0.6Ga0.4N showed an absorption peak at 247 meV (1973 cm–1) with a full width at half maximum (FWHM) of 126 meV, while the second... Plus

Ajouter à la liste personnelle
    Summary
    Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first transistor with a barrier consisting of Al0.6Ga0.4N showed an absorption peak at 247 meV (1973 cm–1) with a full width at half maximum (FWHM) of 126 meV, while the second device utilizing an Al0.8Ga0.2N barrier had its peak at 306 meV (2447 cm–1) with a FWHM of 86 meV. Self-consistently computed potentials and intersubband transition energies showed good agreement with the experimental findings, and therefore confirmed previously published values for the internal piezoelectric field in such structures.